Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("IMPURETE PHOSPHORE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 470

  • Page / 19
Export

Selection :

  • and

ON THE MECHANISM RESPONSIBLE FOR PHOSPHORUS IN ACTIVATION IN HEAVILY DOPED SILICONCEROFOLINI GF; POLIGNANO ML; NAVA F et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 4; PP. 363-367; BIBL. 10 REF.Article

NEUTRON TRANSMUTATION DOPING OF SILICON. II: RESISTIVITY INHOMOGENEITY AS A FUNCTION OF COMPENSATION RATIOMEESE JM; GLAIRON PJ.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3677-3683; BIBL. 18 REF.Article

TRANSIENT DECAY OF SATELLITE LINES OF BOUND EXCITONS IN SI:PHUNTER AT; LYON SA; SMITH DL et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 20; NO 6; PP. 2431-2437; BIBL. 21 REF.Article

PHOTOLUMINESCENCE IN HEAVILY-DOPED SI(P)PARSONS RR.1978; CANAD. J. PHYS.; CAN; DA. 1978; VOL. 56; NO 7; PP. 814-826; ABS. FRE; BIBL. 25 REF.Article

RPE DU PHOSPHORE DANS LE SILICIUMPREM SVARUP; TRIVEDI PL.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 2; PP. 323-326; BIBL. 7 REF.Article

DIFFUSION CORRECTIONS TO THE CONDUCTIVITY OF A DISORDERED 3D ELECTRON GASBERGGREN KF.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 4; PP. L45-L49; BIBL. 15 REF.Article

COMPARISON OF THE SPECIFIC HEAT AND CONDUCTIVITY OF SI:PTHOMAS GA; OOTUKA Y; KOBAYASHI S et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 8; PP. 4886-4888; BIBL. 13 REF.Article

THE LOCALISED MODES DUE TO P DEFECTS IN CADMIUM TELLURIDERAMACHANDRAN K; HARIDASAN TM.1981; PRAMANA; ISSN 0304-4289; IND; DA. 1981; VOL. 16; NO 1; PP. 17-38; BIBL. 13 REF.Article

RECUIT DES DEFAUTS PAR DES IMPULSIONS LASER DE DUREE DE L'ORDRE DE LA NANOSECONDE APRES INTRODUCTION DE PETITES DOSES D'IONSKACHURIN GA; NIDAEV EV; DANYUSHKINA NV et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 656-660; BIBL. 9 REF.Article

NOVEL SYNTHESIS TECHNIQUE FOR ZINC-SILICATE PHOSPHORSBROWNLOW JM; CHANG IF.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 5; PP. 479-483; BIBL. 12 REF.Article

PHOTOLUMINESCENCE STUDY OF LASER ANNEALING IN PHOSPHORUS-IMPLANTED AND UNIMPLANTED SILICONNAKASHIMA H; SHIRAKI Y; MIYAO M et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5966-5969; BIBL. 15 REF.Article

INFLUENCE DE L'IMPURETE PHOSPHORE SUR LES PROPRIETES PHYSIQUES DE COUCHES DE SIO2 DEPOSEES DANS UN PLASMAVIRTMANIS AS; KALNYNYA RP; FELTYN IA et al.1975; LATV. P.S.R. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1975; NO 5; PP. 30-34; ABS. ANGL.; BIBL. 8 REF.Article

FROTTEMENT INTERNE PAR LES DISLOCATIONS DANS LES TRICHITES CRISTALLINES DE SILICIUMANTIPOV SA; BELYAVSKIJ VI; DROZHZHIN AI et al.1982; FIZIKA TVERDOGO TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 11; PP. 3268-3272; BIBL. 19 REF.Article

LOW-TEMPERATURE MAGNETIC SUSCEPTIBILITY OF SI: P IN THE NONMETALLIC REGIONANDRES K; BHATT RN; GOALWIN P et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 1; PP. 244-260; BIBL. 24 REF.Article

TEMPERATURE DEPENDANCE OF HALL FACTOR IN LOW-COMPENSATED N-TYPE SILICONOHTA E; SAKATA M.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 10; PP. 1795-1804; BIBL. 37 REF.Article

ELECTRICAL PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERSFINETTI M; NEGRINI P; SOLMI S et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1313-1317; BIBL. 23 REF.Article

ELECTRONIC THERMOELECTRIC POWER OF PHOSPHORUS DOPED GEBOGHOSIAN HH; DUBEY KS.1981; IND. J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1981; VOL. 19; NO 1; PP. 76-80; BIBL. 17 REF.Article

STRESS DEPENDENCE OF THE BINDING ENERGY OF D- CENTERS IN SILARSEN DM.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 10; PP. 5521-5526; BIBL. 13 REF.Article

METAL NON-METAL TRANSITION IN PHOSPHORUS-DOPED SILICONSASAKI W.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 42; NO 6; PP. 725-733; BIBL. 25 REF.Article

THE EFFECTS OF PHOSPHORUS DIFFUSION COOLING RATE ON I2L GAINMORRIS BL.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 457-465; BIBL. 15 REF.Article

A COMPARISON OF MEASUREMENT TECHNIQUES FOR DETERMINING PHOSPHORUS DENSITIES IN SEMICONDUCTOR SILICONTHURBER WR.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; NO 3; PP. 551-560; BIBL. 18 REF.Article

DETERMINATION OF BORON AND PHOSPHORUS CONCENTRATION IN SILICON BY PHOTOLUMINESCENCE ANALYSIS.TAJIMA M.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 719-721; BIBL. 9 REF.Article

A COMMENT ON THE HALL EFFECT IN PHOSPHORUS-DOPED SILICONDESHMUKH VGI.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 37; NO 5; PP. 649-651; BIBL. 13 REF.Article

POSITRON ANNIHILATION IN N- AND P-TYPE, B- AND P-DOPED SILICON CRYSTALS OF 100 AND 111 ORIENTATIONS.KELLY JJ; LAMBRECHT RM.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 60; NO 5; PP. 475-477; BIBL. 18 REF.Article

ETUDE DE LA VARIATION EN FONCTION DU TEMPS ET DE LA TEMPERATURE DE LA RESISTANCE MECANIQUE DU SELENIUM AMORPHE ET DE L'EFFET PRODUIT SUR CELLE-CI PAR DIVERSES IMPURETESKULIEV BB; ABASOV SA; KHALILOV KH M et al.1974; IN: FIZ. SVOJSTVA SELENA SELENOVYKH PRIB.; BAKU; EH LM; DA. 1974; PP. 167-188; BIBL. 36 REF.Book Chapter

  • Page / 19